STP75NF75FP

MOSFET N-Ch, 75V-0.0095ohms 80A

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SeekIC No. : 00157055 Detail

STP75NF75FP: MOSFET N-Ch, 75V-0.0095ohms 80A

floor Price/Ceiling Price

US $ .95~1.22 / Piece | Get Latest Price
Part Number:
STP75NF75FP
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~620
  • 620~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $1.22
  • $1.04
  • $1
  • $.95
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.011 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 75 V
Continuous Drain Current : 80 A
Package / Case : TO-220FP
Resistance Drain-Source RDS (on) : 0.011 Ohms


Features:

`TYPICAL RDS(on) = 0.0095 W
`EXCEPTIONAL dv/dt CAPABILITY
`100% AVALANCHE TESTED
`SURFACE-MOUNTING D2PAK (TO-263)
`POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")



Application

·SOLENOID AND RELAY DRIVERS
·DC MOTOR CONTROL
·DC-DC CONVERTERS
·AUTOMOTIVE ENVIRONMENT



Specifications

Symbol Parameter Value Unit
STB75NF75
STP75NF75
STP75NF75FP  
VDS Drain-source Voltage (VGS = 0) 75 V
VDGR Drain-gate Voltage (RGS = 20 k) 75 V
VGS
Gate- source Voltage ± 20 V
ID Drain Current (continuous) at TC = 25 80 80(*) A
ID Drain Current (continuous) at TC = 100 70 70(*) A
IDM(`) Drain Current (pulsed) 320 320(*)
A
Ptot Total Dissipation at TC = 25 300 45 W
  Derating Factor 2.0 0.3 W/
dv/dt (1) Peak Diode Recovery voltage slope 12
V/ns
EAS (2)
Single Pulse Avalanche Energy 700 mJ
VISO Insulation Withstand Voltage (DC) ------ 2000 V
Tstg Storage Temperature -55 to 175
Tj Operating Junction Temperature



Description

This STP75NF75FP MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.


Parameters:

Technical/Catalog InformationSTP75NF75FP
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs11 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 3700pF @ 25V
Power - Max45W
PackagingTube
Gate Charge (Qg) @ Vgs160nC @ 10V
Package / CaseTO-220FP
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP75NF75FP
STP75NF75FP



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