MOSFET N-Ch 600 Volt 7.2 A
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 7.2 A | ||
| Resistance Drain-Source RDS (on) : | 1.2 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 | Packaging : | Tube |
| Symbol | Parameter | Value | Unit | |
| STP7NB60 | STP7NB60FP | |||
| VDS | Drain-source Voltage (VGS =0) | 600 | V | |
| VDGR | Drain-gate Voltage (RGS =20kΩ) | 600 | V | |
| VGS | Gate- source Voltage | ±30 | V | |
| ID | Drain Current (continuous) at TC = 25°C | 7.2 | 4.1 | A |
| ID | Drain Current (continuous) at TC =100°C | 4.5 | 2.6 | A |
| IDM (· ) | Drain Current (pulsed) | 28.8 | 28.8 | A |
| PTOT | Total Dissipation at TC = 25°C | 125 | 40 | W |
| Derating Factor | 1.0 | 0.32 | W/°C | |
| dv/dt(1) | Peak Diode Recovery voltage slope | 4.5 | 4.5 | V/ns |
| VISO | Insulation Withstand Voltage (DC) | 2000 | V | |
Tstg |
Storage Temperature |
-65to150 | °C | |
| Tj | Operating Junction Temperature | 150 | °C | |
| Technical/Catalog Information | STP7NB60 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 7.2A |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 1625pF @ 25V |
| Power - Max | 125W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 45nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STP7NB60 STP7NB60 497 2761 5 ND 49727615ND 497-2761-5 |