STP7NB60

MOSFET N-Ch 600 Volt 7.2 A

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STP7NB60 Picture
SeekIC No. : 00162229 Detail

STP7NB60: MOSFET N-Ch 600 Volt 7.2 A

floor Price/Ceiling Price

Part Number:
STP7NB60
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 7.2 A
Resistance Drain-Source RDS (on) : 1.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 7.2 A
Resistance Drain-Source RDS (on) : 1.2 Ohms


Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITCHMODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FORWELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTORDRIVE



Specifications

Symbol Parameter Value Unit
    STP7NB60 STP7NB60FP  
VDS Drain-source Voltage (VGS =0) 600 V
VDGR Drain-gate Voltage (RGS =20kΩ) 600 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuous) at TC = 25°C 7.2 4.1 A
ID Drain Current (continuous) at TC =100°C 4.5 2.6 A
IDM (· ) Drain Current (pulsed) 28.8 28.8 A
PTOT Total Dissipation at TC = 25°C 125 40 W
  Derating Factor 1.0 0.32 W/°C
dv/dt(1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns
VISO Insulation Withstand Voltage (DC)   2000 V

Tstg

Storage Temperature
-65to150 °C
Tj Operating Junction Temperature 150 °C



Description

Using the latest high voltage MESH OVERLAY process, SGS-Thomson has designed an advanced family of power MOSFETs STP7NB60 with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.


Parameters:

Technical/Catalog InformationSTP7NB60
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C7.2A
Rds On (Max) @ Id, Vgs1.2 Ohm @ 3.6A, 10V
Input Capacitance (Ciss) @ Vds 1625pF @ 25V
Power - Max125W
PackagingTube
Gate Charge (Qg) @ Vgs45nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names STP7NB60
STP7NB60
497 2761 5 ND
49727615ND
497-2761-5



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