STP7NB60FP

Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITCHMODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FORWELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTORDRIVE


Specifications

Symbol	Parameter	Value		Unit
		STP7NB60	STP7NB60FP
VDS	Drain-source Voltage (VGS =0)	600		V
VDGR	Drain-gate Voltage (RGS =20kΩ)	600		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuous) at TC = 25°C	7.2	4.1	A
ID	Drain Current (continuous) at TC =100°C	4.5	2.6	A
IDM (· )	Drain Current (pulsed)	28.8	28.8	A
PTOT	Total Dissipation at TC = 25°C	125	40	W
	Derating Factor	1.0	0.32	W/°C
dv/dt(1)	Peak Diode Recovery voltage slope	4.5	4.5	V/ns
VISO	Insulation Withstand Voltage (DC)		2000	V
Tstg	Storage Temperature	-65to150		°C
Tj	Operating Junction Temperature	150		°C

Description

Using the latest high voltage MESH OVERLAY process, SGS-Thomson has designed an advanced family of power MOSFETs STP7NB60FP with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.