ApplicationDC MOTOR CONTROL (DISK DRIVES,etc.)DC-DC & DC-AC CONVERTERSSYNCHRONOUS RECTIFICATIONSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage(RGS = 20 k) 100 V VGS Gate-source Voltage ±...
STP7NE10L: ApplicationDC MOTOR CONTROL (DISK DRIVES,etc.)DC-DC & DC-AC CONVERTERSSYNCHRONOUS RECTIFICATIONSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) ...
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| Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
100 |
V |
|
VDGR |
Drain- gate Voltage(RGS = 20 k) |
100 |
V |
|
VGS |
Gate-source Voltage |
±20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
7 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
4.9 |
A |
|
IDM(•) |
Drain Current (pulsed) |
28 |
A |
|
Ptot |
Total Dissipation at Tc = 25 |
45 |
W |
| Derating Factor |
0.3 |
W/ | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
6 |
V/ns |
|
Tstg |
Storage Temperature |
-65 to 150 |
|
|
Tj |
Max. Operating Junction Temperature |
175 |
This STP7NE10L Power MOSFET is the latest development of STMicroelectronics unique " Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.