STP9NB60

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.7 Ohms


Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value		Unit
		STP9NB60	STP9NB60FP
VDS	Drain-source Voltage (VGS =0)	600		V
VDGR	Drain-gate Voltage (RGS =20kΩ)	600		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuous) at TC = 25°C	9.0	9.0(*)	A
ID	Drain Current (continuous) at TC =100°C	5.7	5.7 (*)	A
IDM (· )	Drain Current (pulsed)	36	36 (*)	A
PTOT	Total Dissipation at TC = 25°C	125	40	W
	Derating Factor	1	0.32	W/°C
dv/dt(1)	Peak Diode Recovery voltage slope	4.5	4.5	V/ns
VISO	Insulation Withstand Voltage (DC)		2000	V
Tstg	Storage Temperature	-65to150		°C
Tj	Operating Junction Temperature	150		°C

Description

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs STP9NB60 with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.