MFG:ST Package Cooled:TO-220 D/C:08+
MFG: ST
Package Cooled: TO-220
D/C: 08+
Description: The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH&...
|
Symbol |
Parameter |
Value |
Unit | |
|---|---|---|---|---|
| STP9NK50Z STB9NK50Z |
STP9NK50ZFP | |||
|
VDS |
Drain-source Voltage (VGS = 0) |
500 |
V | |
|
VDGR |
Drain-gate Voltage (RGS = 20 kΩ) |
500 |
V | |
|
VGS |
Gate- source Voltage |
± 30 |
V | |
|
ID |
Drain Current (continuous)at TC =25 |
7.2 |
7.2(*) |
A |
|
ID |
Drain Current (continuous)at TC =100 |
4.5 |
4.5 (*) |
A |
|
IDM () |
Drain Current (pulsed) |
28.8 |
28.8(*) |
A |
|
PTOT |
Total Dissipation at TC = 25 |
110 |
30 |
W |
|
Derating Factor |
0.88 |
0.24 |
W/ | |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5KΩ) |
3500 |
V | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V /ns | |
|
VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
V |
|
Tj Tstg |
Operating Junction Temperature Storage Temperature |
55 to 150 55 to 150 |
| |
STP9NK50Z
PDF/DataSheet Download
The PowerMESH™II STP9NC65FPis the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, ga...
The PowerMESH™II STP9NC65is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate...
The PowerMESHTMII STP9NC60FP is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charg...
The PowerMESHTMII STP9NC60is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge a...
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETsSTP9NB60FP with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination struc...
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs STP9NB60 with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination struct...
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