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Part Number: STQ1NE10L

 

 

 

 

Description: This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" s...


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STQ1NE10L General Description


This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STQ1NE10L Maximum Ratings

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS = 20 k)
100
V
VGS
Gate-Source Voltage
± 16
V
ID
Drain Current (continuous) at Tc = 25
1
A
ID

Drain Current (continuous) at Tc = 100
0.6
A
IDM(`)
Drain Current (pulsed)
4
A
PTOT(1)
Total Dissipation at Tc = 25
3
W
Derating Factor
0.025
W/
dv/dt (1)
Peak Diode Recovery voltage slope
6
V/ns
EAS (3) Single Pulse Avalanche Energy 400 mJ
Tstg
Storage Temperature
-55 to 150
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area (1)ISD0.3A, di/dt £100A/µs, VDD0V(BR)DSS, Tj0 TJMAX
(3) Starting Tj = 25 , ID = 1A, VDD = 50V

STQ1NE10L Typical Application

DC MOTOR CONTROL (DISK DRIVES, etc.)
DC-DC & DC-AC CONVERTERS
  SYNCHRONOUS RECTIFICATION

STQ1NE10L datasheet

STQ1NE10L
PDF/DataSheet Download

  • Datasheet: STQ1NE10L
  • File Size: 319086 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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