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STQ1NE10L

Application DC MOTOR CONTROL (DISK DRIVES, etc.) DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATIONSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage (RGS = 20 k) 100 V VGS Gate-Source...

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SeekIC No. : 004508666 Detail

STQ1NE10L: Application DC MOTOR CONTROL (DISK DRIVES, etc.) DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATIONSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VG...

STQ1NE10L Data Sheet

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Part Number:
STQ1NE10L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

DC MOTOR CONTROL (DISK DRIVES, etc.)
DC-DC & DC-AC CONVERTERS
  SYNCHRONOUS RECTIFICATION


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS = 20 k)
100
V
VGS
Gate-Source Voltage
± 16
V
ID
Drain Current (continuous) at Tc = 25
1
A
ID

Drain Current (continuous) at Tc = 100
0.6
A
IDM(`)
Drain Current (pulsed)
4
A
PTOT(1)
Total Dissipation at Tc = 25
3
W
Derating Factor
0.025
W/
dv/dt (1)
Peak Diode Recovery voltage slope
6
V/ns
EAS (3) Single Pulse Avalanche Energy 400 mJ
Tstg
Storage Temperature
-55 to 150
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area (1)ISD0.3A, di/dt £100A/µs, VDD0V(BR)DSS, Tj0 TJMAX
(3) Starting Tj = 25 , ID = 1A, VDD = 50V


Description

This Power MOSFET STQ1NE10L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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