STW12NA50

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.6 Ohms
Continuous Drain Current : 11.6 A


Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·SWITCH MODE POWERSUPPLIES (SMPS)
·DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	500	V
VDGR	Drain- gate Voltage (RGS = 20 Ώ)	500	V
VGS	Gate-Source Voltage	±30	V
ID	Drain Current (continuous) at Tc = 25	11.6	A
ID	Drain Current (continuous) at Tc = 100	7.3	A
IDM(`)	Drain Current (pulsed)	46.4	A
PTOT	Total Dissipation at Tc = 25	170	W
	Derating Factor	1.36	W/
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

(`)Pulse width limited by safe operating area          


Description

This STW12NA50 series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietaryedge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.