Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 500 V
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-247
Continuous Drain Current
: 14 A
Resistance Drain-Source RDS (on)
: 0.35 Ohms
ApplicationThe MDmesh™ family is very suitablr for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.
Specifications
| Symbol |
Parameter |
Value |
Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
500 |
V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
500 |
V |
| VGS |
Gate-Source Voltage |
± 30 |
V |
| ID |
Drain Current (continuous) at Tc = 25 |
14 |
A |
| ID |
Drain Current (continuous) at Tc = 100 |
8.8 |
A |
| IDM(1) |
Drain Current (pulsed) |
56 |
A |
| PTOT |
Total Dissipation at Tc = 25 |
175 |
W |
|
Derating Factor |
1.28 |
W/ |
| dv/dt(1) |
Peak Diode Recovery voltage slope |
6 |
V/ns |
| Tstg |
Storage Temperature |
-65 to 150 |
|
| Tj |
Max. Operating Junction Temperature |
150 |
|
(`) Pulse width limited by safe operating area (1) ISD 14 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
(*)Limited only by maximum temperature allowed
DescriptionThe STW14NM50 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprierati strip technique yields overall dynamic performance that is significantly better than that of similar completition's products.
Parameters: | Technical/Catalog Information | STW14NM50 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 550V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Rds On (Max) @ Id, Vgs | 350 mOhm @ 6A, 10V |
| Input Capacitance (Ciss) @ Vds | 1000pF @ 25V |
| Power - Max | 175W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 38nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STW14NM50
STW14NM50
497 3259 5 ND
49732595ND
497-3259-5
|
STW14NM50 Data Sheet
