STW16NB60

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 16 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.35 Ohms


Application

·SWITCH MODE POWER SUPPLIES (SMPS)
·DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	600	V
VDGR	Drain- gate Voltage (RGS = 20 k)	600	V
VGS	Gate-source Voltage	±30	V
ID	Drain Current (continuous) at Tc = 25	16	A
ID	Drain Current (continuous) at Tc = 100	10	A
IDM(•)	Drain Current (pulsed)	64	A
PTOT	Total Dissipation at Tc = 25	220	W
	Derating Factor	1.76	W/
dv/dt(1)	Peak Diode Recovery voltage slope	4	V/ns
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area     (1)I_SD 16A, di/dt100A/µs, V_DDV_(BR)DSS, T_j T_JMAX.


Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics STW16NB60 has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area,exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.