SUD19N20-90 Selling Leads, Price trend , Vishay/Siliconix, SUD19N20-90 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00166464 Detail

SUD19N20-90: MOSFET 200V 17.5A 100W

SUD19N20-90 Data Sheet

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Part Number:: SUD19N20-90
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	19 A
Resistance Drain-Source RDS (on) :	90 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	TO-252-3	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 90 mOhms
Continuous Drain Current : 19 A
Package / Case : TO-252-3

Features:

`TrenchFET^®Power MOSFET
`175 Junction Temperature
`PWM Optimized

Application

·Primary Side Switch

Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DS	200	V
Gate-Source Voltage		V_GS	±20
Continuous Drain Current(T_J= 175)^b	T_C = 25	I_D	19	A
	T_C= 125		11
Pulsed Drain Current		I_DM	40
Continuous Source Current (Diode Conduction)		I_S	19
Avalanche Current		I_AR	19
Repetitive Avalanche Energy (Duty Cycle 1%)	L = 0.1 mH	E_AR	18	mJ
Maximum Power Dissipationa	T_C = 25	P_D	100^b	W
	T_A = 25		3^a
Operating Junction and Storage Temperature Range		T_^J, T_^stg	-55 to 175

Description

N-Channel 200-V (D-S) 175C MOSFET SUD19N20-90

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