SUD50N03-09P

Features: ·TrenchFET® Power MOSFET·Optimized for High- or Low-Side·100% Rg TestedApplication·DC/DC Converters·Synchronous RectifiersSpecifications ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Sour...

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SeekIC No. : 004509223 Detail

SUD50N03-09P: Features: ·TrenchFET® Power MOSFET·Optimized for High- or Low-Side·100% Rg TestedApplication·DC/DC Converters·Synchronous RectifiersSpecifications ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS O...

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Part Number:
SUD50N03-09P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

· TrenchFET® Power MOSFET
· Optimized for High- or Low-Side
· 100% Rg Tested



Application

· DC/DC Converters
· Synchronous Rectifiers



Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)

Parameter

Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Currenta TC = 25 ID 63b A
TC = 100 44.5b
Pulsed Drain Current IDM 50
Continuous Source Current (Diode Conduction)a

IS

10

Avalanche Current IAS 35
Single Pulse Avalanche Energy L = 0.1 mH EAS 61 mJ
Maximum Power Dissipationa TC = 25 PD 65.2 W
TA = 25 7.5a
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175



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