Features: ·TrenchFET® Power MOSFET·Optimized for High- or Low-Side·100% Rg TestedApplication·DC/DC Converters·Synchronous RectifiersSpecifications ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Sour...
SUD50N03-09P: Features: ·TrenchFET® Power MOSFET·Optimized for High- or Low-Side·100% Rg TestedApplication·DC/DC Converters·Synchronous RectifiersSpecifications ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS O...
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| ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) | ||||
|
Parameter |
Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±20 | ||
| Continuous Drain Currenta | TC = 25 | ID | 63b | A |
| TC = 100 | 44.5b | |||
| Pulsed Drain Current | IDM | 50 | ||
| Continuous Source Current (Diode Conduction)a |
IS |
10 | ||
| Avalanche Current | IAS | 35 | ||
| Single Pulse Avalanche Energy | L = 0.1 mH | EAS | 61 | mJ |
| Maximum Power Dissipationa | TC = 25 | PD | 65.2 | W |
| TA = 25 | 7.5a | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 175 | ||