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SUP75N08-10

MOSFET 75V 75A 187W

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SeekIC No. : 00166801 Detail

SUP75N08-10: MOSFET 75V 75A 187W

SUP75N08-10 Data Sheet

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Part Number:
SUP75N08-10
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 10 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB-3 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 75 V
Resistance Drain-Source RDS (on) : 10 mOhms
Continuous Drain Current : 75 A
Package / Case : TO-220AB-3


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)

Parameter

 Symbol Limit Unit
Gate-Source Voltage VGS ±20

 V

Continuous Drain Current
(TJ = 175)		 TC = 25 ID 75a A
TC = 125 55
Pulsed Drain Current IDM 240
Avalanche Current IAR 60
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
Power Dissipation TC = 25 (TO-220AB and TO-263) PD 187c W
TA = 25 (TO-263)d 3.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175



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