MOSFET 30V 7.5A 2W
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 5.7 A |
| Resistance Drain-Source RDS (on) : | 22 mOhms | Configuration : | Dual |
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT |
| Package / Case : | SO-8 |
| Parameter | Symbol | Si4804BDY | Si4804DY | Unit | |
| Drain-Source Voltage |
VDS | 30 | 30 | v | |
| Gate-Source Voltage | VGS | ±20 | ±20 | ||
| Continuous Drain Current | TA=25 |
ID | 7.5 | 7.5 | A |
| TA=70 | 6 | 6 | |||
| Continuous Drain Current |
IDM | 30 | 20 | ||
| Continuous Source Current (MOSFET Diode Conduction) | IS | 2.3 | 1.7 | ||
| Power Dissipation |
TA=25 | PD | 1.7 | 1.7 | W |
| TA=70 | 2.0 | 2.0 | |||
| Operating Junction and Storage Temperature Range | TjandTstg | −55 to150 | −55 to 150 | ||
| Maximum Junction-to-Ambient | RthJA | 62.5 | 62.5 | /W | |