SI4828DY

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 5.8 A, 7.5 A
Resistance Drain-Source RDS (on) : 22 mOhms, 13.5 mOhms


Pinout




Specifications

Parameter		Symbol	Channel-1		Channel-2		Unit
			10 secs	Steady State	10 secs	Steady State
Drain-Source Voltage		VDS	30				V
Continuous Drain Current (TJ = 150°C)a	TA = 25°C	ID	7.5	5.8	9.8	7.5	A
	TA = 70°C		6	4.6	7.8	6
Pulsed Drain Current(10 s Pulse Width)		IDM	30		40
Continuous Source Current (Diode Conduction)a		IS	1.8	1.06	1.8	1.06
Maximum Power Dissipationa	TA = 25°C	PD	2	1.17	2	1.17	W
	TA = 70°C		1.78	0.75	1.28	0.75
Operating Junction and Storage Temperature Range		TJ, Tstg	55 to 150				°C