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SI4833DY

MOSFET 30V 3.5A 2W

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SeekIC No. : 00166530 Detail

SI4833DY: MOSFET 30V 3.5A 2W

SI4833DY Data Sheet

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Part Number:
SI4833DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.5 A
Resistance Drain-Source RDS (on) : 85 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 3.5 A
Resistance Drain-Source RDS (on) : 85 mOhms


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS -30 V
Reverse Voltage (Schottky) VKA 30
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID ±3.5 A
TA = 70°C ±2.8
Pulsed Drain Current(10 s Pulse Width) IDM ±20
Continuous Source Current (Diode Conduction)a IS -1.7
Average Foward Current (Schottky) IF 1.4
Pulsed Foward Current (Schottky) IFM 30
Maximum Power DissipationaMOSFET)a, b TA = 25°C PD 2 W
TA = 70°C 1.3
Maximum Power Dissipation (Schottky)a, b TA = 25°C 1.9  
TA = 70°C 1.2
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 °C



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