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SI4836DY

MOSFET 12V 13A 1W

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SeekIC No. : 00165031 Detail

SI4836DY: MOSFET 12V 13A 1W

SI4836DY Data Sheet

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Part Number:
SI4836DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 12 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 3 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Resistance Drain-Source RDS (on) : 3 mOhms
Drain-Source Breakdown Voltage : 12 V
Continuous Drain Current : 17 A
Package / Case : SOIC-8 Narrow


Features:

·  TrenchFET Power MOSFET
·  PWM Optimized
·  100% RG Tested


Application

·  Low Voltage Synchronous Rectfication
·  Low Voltage LDO Pass Transistor


Pinout

Connection Diagram


Specifications

Parameter Symbol Channel-1 Channel-2 Unit
10 secs Steady State
Drain-Source Voltage VDS 12 V
Gate-Source Voltage VGS ±8
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID 25 17 A
TA = 70°C 20 13
Pulsed Drain Current(10 s Pulse Width) IDM 60
Continuous Source Current (Diode Conduction)a IS 2.9 1.3
Maximum Power Dissipationa TA = 25°C PD 3.5 1.6 W
TA = 70°C 2.2 1
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 °C



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