SI4848DY

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 150 V
Resistance Drain-Source RDS (on) : 85 mOhms
Continuous Drain Current : 3.7 A


Pinout






Specifications

Parameter		Symbol	10 secs	Steady State	Unit
Drain-Source Voltage		VDS	150		V
Gate-Source Voltage		VGS	±20
Continuous Drain Current (TJ = 150)a	TA = 25	ID	3.7	2.7	A
	TA = 70		3.0	2.1
Pulsed Drain Current		IDM	25
Avalanch Current	L = 0.1 mH	IAS	10
continuous Source Current (Diode Conduction)a		IS	2.5	1.3
Maximum Power Dissipationa	TA = 25	PD	3.0	1.5	W
	TA = 70		1.9	1.0
Operating Junction and Storage Temperature Range		TJ, Tstg	−55 to 150

Description

N-Channel 150-V (D-S) MOSFET Si4848DY