SI4850EY

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 22 mOhms


Pinout






Specifications

Parameter		Symbol	10 secs	Steady State	Unit
Drain-Source Voltage		VDS	60		V
Gate-Source Voltage		VGS	±20
Continuous Drain Current (TJ = 175)a	TA = 25	ID	8.5	6.0	A
	TA = 70		7.1	5.0
Pulsed Drain Current		IDM	40
Avalanche Current		IAS	15
Repetitive Avalanche Energy		EAS	11		mJ
Maximum Power Dissipationa	TA = 25	PD	3.3	1.7	W
	TA = 70		2.3	1.2
Operating Junction and Storage Temperature Range		TJ, Tstg	-55 to 175

Description

N-Channel 60-V (D-S) PWM Optimized MOSFET Si4850EY