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SI4892DY

MOSFET 30V 12.4A 3.1W

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SeekIC No. : 00164555 Detail

SI4892DY: MOSFET 30V 12.4A 3.1W

SI4892DY Data Sheet

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Part Number:
SI4892DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8.8 A
Resistance Drain-Source RDS (on) : 12 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 12 mOhms
Continuous Drain Current : 8.8 A


Features:

·  TrenchFET Power MOSFET
·  High Efficiency PWM Optimized
·  100% Rg Tested
·  100% UIS Tested


Pinout

Connection Diagram


Specifications

Parameter Symbol Channel-1 Channel-2 Unit
10 secs Steady State
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID 12.4 8.8 A
TA = 70°C 9.9 7.0
Pulsed Drain Current(10 s Pulse Width) IDM ±50
Avalanche Current L = 0 1 mH IAS 20
Single-Pulse Avalanche Energy EAS 20
Continuous Source Current (Diode Conduction)a IS 2.6 1.6
Maximum Power Dissipationa TA = 25°C PD 3.1 1.0 W
TA</su



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