Features: TrenchFET® Power MOSFETPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±9 Continuous Drain Current (TJ = 150 )a TA = 25 ID - 7.1 -5.6 A TA = 70 -5.6 -4.5 Pulsed Drain Current I...
Si9424BDY: Features: TrenchFET® Power MOSFETPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±9 Continuous Drain...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | -20 | V | ||
| Gate-Source Voltage | VGS | ±9 | |||
| Continuous Drain Current (TJ = 150 )a | TA = 25 | ID | - 7.1 | -5.6 | A |
| TA = 70 | -5.6 | -4.5 | |||
| Pulsed Drain Current | IDM | -30 | |||
| Continuous Source Current (Diode Conduction)a | IS | 1.7 | -1.0 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 2.0 | 1.25 | W |
| TA = 70 | 1.3 | 0.8 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 150 | |||