MOSFET 20V 6A 2.5W
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V |
| Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 6 A |
| Resistance Drain-Source RDS (on) : | 30 mOhms | Configuration : | Single |
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT |
| Package / Case : | SOIC-8 Narrow |

|
|
Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | 20 | V | |
| Gate-Source Voltage | VGS | ±8 | ||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 6 | A |
| TA = 70 | 4.8 | |||
| Pulsed Drain Current | IDM | 20 | ||
| continuous Source Current (Diode Conduction)a | IS | 1.7 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 2.5 | W |
| TA = 70 | 1.6 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | ||