Transistors RF GaAs 10mm GaN Discrete
TGF2023-10: Transistors RF GaAs 10mm GaN Discrete
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| Technology Type : | HEMT | Frequency : | 18 GHz |
| Gain : | 8.7 dB | Drain Source Voltage VDS : | 40 V |
| Gate-Source Breakdown Voltage : | - 3.6 V | Continuous Drain Current : | 3 A |
| Maximum Operating Temperature : | + 200 C | Mounting Style : | SMD/SMT |
| Package / Case : | 16-Pin-Die |