Features: LOW INTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.5dBmSingle Carrier Level HIGH POWERP1dB=46.5dBm at 7.1GHz to 7.9GHz HIGH GAING1dB=6.5dB at 7.1GHz to 7.9GHz BROAD BAND INTERNALLY MATCHED FETHERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS SYMBOL UNIT RATING ...
TIM7179-45SL: Features: LOW INTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.5dBmSingle Carrier Level HIGH POWERP1dB=46.5dBm at 7.1GHz to 7.9GHz HIGH GAING1dB=6.5dB at 7.1GHz to 7.9GHz BROAD BAND INTERNALLY MAT...
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Features: HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHzHIGH GAIN G1dB= 9.0dB at 7.1GHz to 7.9GHzBROA...
DescriptionThe TIM7785-16 is designed as one kind of microwave power GaAs FET device that has four...
Features: ·LOW INTERMODULATION DISTORTION· HIGH GAIN IM3=-45 dBc at Pout= 31.5dBm G1dB=5.5dB at 7....
CHARACTERISTICS |
SYMBOL |
UNIT |
RATING |
Drain-Source Voltage |
VDS |
V |
15 |
Gate-Source Voltage |
VGS |
V |
-5 |
Drain Current |
IDS |
A |
26 |
Total Power Dissipation (Tc= 25 ) |
PT |
W |
125 |
Channel Temperature |
Tch |
175 | |
Storage Temperature |
Tstg |
-65 to +175 |