Features: HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHzHIGH GAIN G1dB= 9.0dB at 7.1GHz to 7.9GHzBROAD BAND INTERNALLY MATCHEDHERMETICALLY SEALED PACKAGEApplicationThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHI...
TIM7179-8UL: Features: HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHzHIGH GAIN G1dB= 9.0dB at 7.1GHz to 7.9GHzBROAD BAND INTERNALLY MATCHEDHERMETICALLY SEALED PACKAGEApplicationThe information contained herein is p...
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Features: LOW INTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.5dBmSingle Carrier Level HIGH POW...
DescriptionThe TIM7785-16 is designed as one kind of microwave power GaAs FET device that has four...
Features: ·LOW INTERMODULATION DISTORTION· HIGH GAIN IM3=-45 dBc at Pout= 31.5dBm G1dB=5.5dB at 7....
HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHz
HIGH GAIN G1dB= 9.0dB at 7.1GHz to 7.9GHz
BROAD BAND INTERNALLY MATCHED
HERMETICALLY SEALED PACKAGE
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) | ||||||
CHARACTERISTICS | SYMBOL | CONDITIONS | UNIT | MIN. | TYP. | MAX. |
Output Power at 1Db Gain Compression Point |
P1dB | VDS= 10V f = 7.1 to 7.9GHz |
dBm | 38.5 | 39.5 | - |
Power Gain at 1dB Gain Compression Point |
G1dB | dB | 8.0 | 9.0 | - | |
Drain Current | IDS1 | A | - | 2.2 | 2.6 | |
Gain Flatness | ∆G | dB | - | - | ±0.6 | |
Power Added Efficiency | add | % | - | 35 | - | |
3rd Order Intermodulation Distortion |
IM3 | Two Tone Test Po=28.5dBm (Single Carrier Level) |
dBc | -44 | -47 | - |
Drain Current | IDS2 | A | - | 2.2 | 2.6 | |
--Recommended Gate Resistance(Rg) : 28 Ω (Max.) |