Features: ·LOW INTERMODULATION DISTORTION· HIGH GAIN IM3=-45 dBc at Pout= 31.5dBm G1dB=5.5dB at 7.7GHz to 8.5GHz Single Carrier Level· BROAD BAND INTERNALLY MATCHED FET·HIGH POWER· HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltag...
TIM7785-16SL: Features: ·LOW INTERMODULATION DISTORTION· HIGH GAIN IM3=-45 dBc at Pout= 31.5dBm G1dB=5.5dB at 7.7GHz to 8.5GHz Single Carrier Level· BROAD BAND INTERNALLY MATCHED FET·HIGH POWER· HERMETICALLY SEAL...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: LOW INTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.5dBmSingle Carrier Level HIGH POW...
Features: HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHzHIGH GAIN G1dB= 9.0dB at 7.1GHz to 7.9GHzBROA...
DescriptionThe TIM7785-16 is designed as one kind of microwave power GaAs FET device that has four...
CHARACTERISTICS |
SYMBOL |
UNIT |
RATING |
Drain-Source Voltage |
VDS |
V |
15 |
Gate-Source Voltage |
VGS |
V |
-5 |
Drain Current |
IDS |
A |
14.0 |
Total Power Dissipation (Tc= 25 °C) |
PT |
W |
75 |
Channel Temperature |
Tch |
°C |
175 |
Storage Temperature |
Tstg |
°C |
-65 to +175 |