TIM7785-16

The TIM7785-16 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 42.5 dBm at 7.7 GHz to 8.5 GHz;(2)high gain: G1db = 5.0 dB at 7.7 GHz to 8.5 GHz;(3)broad band internally matched;(4)hermetically sealed package.

The electrical characteristics of the TIM7785-16 can be summarized as:(1)transconductance: 3600 ms;(2)pinch-off voltage: -2.0 to -5.0 V;(3)saturated drain current: 11.6 to 15.0 A;(4)gate-source breakdown voltage: -5 V;(5)thermal resistance: 1.4 to 1.8 /W.

The RF performance speifications of the TIM7785-16 can be concluded into some points:(1)output power at 1 dB compression point: 41.5 to 42.0 dBm;(2)power gain at 1 dB compression point: 4.0 to 5.0 dB;(3)drain current: 4.5 to 5.5 A;(4)power added efficiency: 24 %;(5)channel temperature rise: 80 .

And the absolute maximum ratings of this device can be summarized as:(1)drain-source voltage: 15 V;(2)gate-source voltage: -5 V;(3)drain current: 16 A;(4)total power dissipation: 70 W;(5)channel temperature: 175 ;(6)storage temperature: -65 to +175 . If you want to know more information about the TIM7785-16, please download the datasheet in www.seekic.com or www.chinaicmart.com .