TIM7785-30SL

The TIM7785-30SL is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 45 dBm at 7.7 GHz to 8.5 GHz;(2)high gain: G1db = 6.0 dB at 7.7 GHz to 8.5 GHz;(3)broad band internally matched;(4)hermetically sealed package;(5)low intermodulation distortion: IM3= -45 dBc at Po = 34.5 dBm, single carrier level.

The electrical characteristics of the TIM7785-30SL can be summarized as:(1)transconductance: 6300 ms;(2)pinch-off voltage: -1.0 to -4.0 V;(3)saturated drain current: 18 to 22 A;(4)gate-source breakdown voltage: -5 V;(5)thermal resistance: 1.0 to 1.3 /W.

The RF performance speifications of the TIM7785-30SL can be concluded into some points:(1)output power at 1 dB compression point: 44.0 to 45.0 dBm;(2)power gain at 1 dB compression point: 5.0 to 6.0 dB;(3)drain current: 7.0 to 8.0 A;(4)power added efficiency: 34 %;(5)channel temperature rise: 100 ;(6)3rd order intermodulation distortion: -42 to -45 dBc.

And the absolute maximum ratings of this device can be summarized as:(1)drain-source voltage: 15 V;(2)gate-source voltage: -5 V;(3)drain current: 22 A;(4)total power dissipation: 115 W;(5)channel temperature: 175 ;(6)storage temperature: -65 to +175 . If you want to know more information about the TIM7785-30SL, please download the datasheet in www.seekic.com or www.chinaicmart.com .