Features: ·LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level·HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz·BROAD BAND INTERNALLY MATCHED FET·HIGH POWER P1dB=39.5dBm at 7.7GHz to 8.5GHz· HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS Symbol ...
TIM7785-8SL: Features: ·LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level·HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz·BROAD BAND INTERNALLY MATCHED FET·HIGH POWER P1dB=39.5...
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Features: LOW INTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.5dBmSingle Carrier Level HIGH POW...
Features: HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHzHIGH GAIN G1dB= 9.0dB at 7.1GHz to 7.9GHzBROA...
DescriptionThe TIM7785-16 is designed as one kind of microwave power GaAs FET device that has four...
|
CHARACTERISTICS |
Symbol |
Unit |
Ratings |
| Drain-Source Voltage |
VDS |
V |
-15 |
| Gate-Source Voltage |
VGS |
V |
-5 |
| Drain Current |
IDS |
A |
7.0 |
| Total Power Dissipation (Tc= 25) |
PT |
W |
39.5 |
| Channel Temperature |
Tch |
|
175 |
| Storage Temperature |
Tstg |
-55~175 |