TPCP8603

Application• High DC current gain: hFE = 120~300 (IC = −0.1 A)• Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)• High-speed switching: tf = 120 ns (typ.)Specifications Characteristics Symbol Rating Unit Collector-vase voltage VCB...

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SeekIC No. : 004526230 Detail

TPCP8603: Application• High DC current gain: hFE = 120~300 (IC = −0.1 A)• Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)• High-speed switching: tf = 120 ns (t...

floor Price/Ceiling Price

Part Number:
TPCP8603
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/12

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Product Details

Description



Application

• High DC current gain: hFE = 120~300 (IC = −0.1 A)
• Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)
• High-speed switching: tf = 120 ns (typ.)



Specifications

Characteristics
Symbol
Rating
Unit
Collector-vase voltage
VCBO
−120
V
Collector-emitter voltage
VCEO
−120
V
Emitter-base voltage
VEBO
−7
V
Collector current DC(Note1)
IC
−1.0
A
Pulse(Note 1)
ICP
−2.0
A
Base current
IB
0.1
mA
Collector power
dissipation
t = 10s
PC (Note 2)
3.00
mW
DC
1.25
mW
Junction temperature
Tj
150
Storage temperature range
Tstg
−55~150

Note 1: Ensure that the channel temperature does not exceed 150 during use of the device.
Note 2: Mounted on the FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).




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