Application• High DC current gain: hFE = 120~300 (IC = −0.1 A)• Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)• High-speed switching: tf = 120 ns (typ.)Specifications Characteristics Symbol Rating Unit Collector-vase voltage VCB...
TPCP8603: Application• High DC current gain: hFE = 120~300 (IC = −0.1 A)• Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)• High-speed switching: tf = 120 ns (t...
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Features: • Small footprint due to a small and thin package• High speed switching̶...
| Characteristics |
Symbol |
Rating |
Unit | |
| Collector-vase voltage |
VCBO |
−120 |
V | |
| Collector-emitter voltage |
VCEO |
−120 |
V | |
| Emitter-base voltage |
VEBO |
−7 |
V | |
| Collector current | DC(Note1) |
IC |
−1.0 |
A |
| Pulse(Note 1) |
ICP |
−2.0 |
A | |
| Base current |
IB |
0.1 |
mA | |
| Collector power dissipation |
t = 10s |
PC (Note 2) |
3.00 |
mW |
| DC |
1.25 |
mW | ||
| Junction temperature |
Tj |
150 |
||
| Storage temperature range |
Tstg |
−55~150 |
||
Note 1: Ensure that the channel temperature does not exceed 150 during use of the device.
Note 2: Mounted on the FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).