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FDR838P, FDR840P, FDR842P

Table of contents:
Info of FDR838P
Info of FDR840P
Info of FDR842P

FDR838P, FDR840P, FDR842P Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:SOP-8 D/C:MSOP-8

FDR838P, FDR840P, FDR842P Datasheet download

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Part Number: FDR838P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: SOP-8

D/C: MSOP-8

Description: MOSFET P-CH 12V 11A SSOT-8

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FDR838P Parameters

Technical/Catalog Information	FDR838P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	17 mOhm @ 8A, 4.5V
Input Capacitance (Ciss) @ Vds	3300pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	45nC @ 4.5V
Package / Case	SSOT-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDR838P FDR838P

FDR838P General Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

FDR838P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-20	V
V_GSS	Gate-Source Voltage	±8	V
ID	Draint Current - Continuous (Note 1)	-8	A
ID	- Pulsed	-50	A
P_D	Maximum Power Dissipation (Note 1a)	1.8	W
	(Note 1b)	1.0
	(Note 1c)	0.9
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDR838P Features

• -8 A, -20 V. RDS(ON) = 0.017 W @ VGS = -4.5 V
RDS(ON) = 0.024 W @ VGS = -2.5 V
• Low gate charge (30nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.

FDR838P Typical Application

• Load switch
• Motor driving
• Power Management

FDR838P Connection Diagram

FDR840P Parameters

Technical/Catalog Information	FDR840P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	12 mOhm @ 10A, 4.5V
Input Capacitance (Ciss) @ Vds	4481pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	60nC @ 4.5V
Package / Case	SSOT-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDR840P FDR840P

FDR840P General Description

This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).

FDR840P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-20	V
V_GSS	Gate-Source Voltage	±12	V
I_D	Draint Current - Continuous (Note 1)	-10	A
I_D	- Pulsed	-50	A
P_D	Maximum Power Dissipation (Note 1a)	1.8	W
	(Note 1b)	1.0
	(Note 1c)	0.9
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDR840P Features

• 10 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 V
RDS(ON) = 17.5 m @ VGS = 2.5 V
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability

FDR840P Typical Application

• Power management
• Load switch
• Battery protection

FDR840P Connection Diagram

FDR842P Parameters

Technical/Catalog Information	FDR842P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	9 mOhm @ 11A, 4.5V
Input Capacitance (Ciss) @ Vds	5350pF @ 6V
Power - Max	900mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	80nC @ 4.5V
Package / Case	SSOT-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDR842P FDR842P FDR842PDKR ND FDR842PDKRND FDR842PDKR

FDR842P General Description

This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

FDR842P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-12	V
V_GSS	Gate-Source Voltage	±8	V
I_D	Draint Current - Continuous (Note 1)	-11	A
I_D	- Pulsed	-50	A
P_D	Maximum Power Dissipation (Note 1a)	1.8	W
	(Note 1b)	1.0
	(Note 1c)	0.9
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDR842P Features

• 11 A, 12 V RDS(ON) = 9 m @ VGS = 4.5 V
RDS(ON) = 12 m @ VGS = 2.5 V
RDS(ON) = 16 m @ VGS = 1.8 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability

FDR842P Typical Application

• Power management
• Load switch
• Battery protection

FDR842P Connection Diagram

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