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FDR3516, FDR4410, FDR4420A

Table of contents:
Info of FDR3516
Info of FDR4410
Info of FDR4420A

FDR3516, FDR4410, FDR4420A Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:22500 D/C:09+

FDR3516, FDR4410, FDR4420A Datasheet download

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Part Number: FDR3516

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: 22500

D/C: 09+

Description: MOSFET N-CHAN 30V 11A SSOT8

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FDR4410 General Description

The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY.

The SuperSOTTM-8 package is 40% smaller than the SO-8 package.

The SuperSOTTM-8 advanced package design and optimized pinout allow the typical power dissipation to be similar to the bigger SO-8 package.

FDR4410 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Draint Current - Continuous (Note 1)	9.3	A
I_D	- Pulsed	4.0	A
P_D	Maximum Power Dissipation (Note 1a)	1.8	W
	(Note 1b)	1
	(Note 1c)	0.9
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDR4410 Features

·9.3 A, 30 V. RDS(ON) = 0.013 W @ VGS = 10 V
RDS(ON) = 0.020 W @ VGS = 4.5 V.
·High density cell design for extremely low RDS(ON).
·Proprietary SuperSOTTM-8 small outline surface mount package with high power and current handling capability.

FDR4410 Connection Diagram

FDR4420A Parameters

Technical/Catalog Information	FDR4420A
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	9 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	2560pF @ 15V
Power - Max	900mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	33nC @ 5V
Package / Case	SSOT-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDR4420A FDR4420A FDR4420ACT ND FDR4420ACTND FDR4420ACT

FDR4420A General Description

The SuperSOT-8 family of N-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

These MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where small package size is required without compromising power handling and fast switching.

FDR4420A Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Draint Current - Continuous (Note 1)	11	A
I_D	- Pulsed	40	A
P_D	Maximum Power Dissipation (Note 1a)	1.8	W
	(Note 1b)	1
	(Note 1c)	0.9
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDR4420A Features

·11 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 V,
·RDS(ON) = 0.013 W @ VGS = 4.5 V.
·Fast switching speed.
·Low gate charge.
·Small footprint 38% smaller than a standard SO-8.
·Low profile package(1mm thick).
·Power handling capability similar to SO-8.

FDR4420A Connection Diagram

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