Position: Home > DataSheet > Index F > FDR Series > FDR844P, FDR8508P, FDR8521L

Low Cost Custom Prototype PCB Manufacturer

FDR844P, FDR8508P, FDR8521L

Table of contents:
Info of FDR844P
Info of FDR8508P
Info of FDR8521L

FDR844P, FDR8508P, FDR8521L Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Integrated Circuits (ICs) Package Cooled:N/A D/C:09+

FDR844P, FDR8508P, FDR8521L Datasheet download

Five Points

Part Number: FDR844P

Category: Integrated Circuits (ICs)

MFG: Fairchild Semiconductor (VA)

Package Cooled: N/A

D/C: 09+

Description: MOSFET P-CHAN 20V SSOT-8

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

FDR844P Parameters

Technical/Catalog Information	FDR844P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	11 mOhm @ 10A, 4.5V
Input Capacitance (Ciss) @ Vds	4951pF @ 10V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	74nC @ 4.5V
Package / Case	SSOT-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDR844P FDR844P

FDR844P General Description

This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications

FDR844P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-20	V
V_GSS	Gate-Source Voltage	±8	V
I_D	Draint Current - Continuous (Note 1)	-10	A
I_D	- Pulsed	-50	A
P_D	Maximum Power Dissipation (Note 1a)	1.8	W
	(Note 1b)	1.0
	(Note 1c)	0.9
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDR844P Features

• 10 A, 20 V. RDS(ON) = 11 m @ VGS = 4.5 V
RDS(ON) = 14 m @ VGS = 2.5 V
RDS(ON) = 20 m @VGS = 1.8 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability

FDR844P Typical Application

• Power management
• Load switch
• Battery protection

FDR844P Connection Diagram

FDR8508P Parameters

Technical/Catalog Information	FDR8508P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	52 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	750pF @ 15V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	12nC @ 5V
Package / Case	SuperSOT-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDR8508P FDR8508P

FDR8521L Parameters

Technical/Catalog Information	FDR8521L
Vendor	Fairchild Semiconductor (VA)
Category	Integrated Circuits (ICs)
Type	High Side Switch
Number of Outputs	1
Voltage - Input	3 ~ 20 V
Package / Case	SuperSOT-8
Packaging	Digi-Reel?
Current Limit	2.9A
Internal Switch(s)	Yes
Operating Temperature	-55°C ~ 150°C
Rds (On)	70 mOhm
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDR8521L FDR8521L FDR8521LDKR ND FDR8521LDKRND FDR8521LDKR

FDR8521L General Description

This device is designed for configuration as a load switch and is particularly suited for power management in portable battery powered electronic equipment. Designed to operate from 3V to 20V input and supply up to 2.9A, the device features a small N-Channel MOSFET (Q1) together with a large P-Channel Power MOSFET (Q2) in a single SO-8 package.

FDR8521L Maximum Ratings

Symbol	Parameter	FDR8321L	Units
V_IN	Input Voltage Range (Note 1)	3 - 20	V
V_ON/OFF	On/Off Voltage Range	2.5 - 8	V
I _L	Load Current - Continuous (Note 2)	2.9	A
I _L	- Pulsed	10	A
P_D	Maximum Power Dissipation (Note 2)	0.8	W
T_J,T_STG	Operating and Storage Temperature Range	-55 to 150	°C
ESD	Electrostatic Discharge Rating MIL-STD-883D Human-Body-Model (100pf/1500 Ohm)	6	kV

FDR8521L Features

• VDROP= 0.07 V @ VIN= 12 V, IL= 1 A.R(ON) = 0.07
VDROP= 0.115 V @ VIN= 5 V, IL= 1 A.R(ON) = 0.115
• VDROP= 0.2 V @ VIN= 12 V, IL=2.9 A.R(ON) = 0.07
VDROP= 0.2 V @ VIN= 5 V,IL= 1.8 A.R(ON) = 0.115 .
• Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6kV Human Body Model).
• High density cell design for extremely low on-resistance.

FDR8521L Typical Application

• Power management
• Load switch

FDR8521L Connection Diagram

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components