Position: Home > DataSheet > Index F > FDR Series > FDR856P, FDR858P, FDR858R

Low Cost Custom Prototype PCB Manufacturer

FDR856P, FDR858P, FDR858R

Table of contents:
Info of FDR856P
Info of FDR858P
Info of FDR858R

FDR856P, FDR858P, FDR858R Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:USOP-8P D/C:07+

FDR856P, FDR858P, FDR858R Datasheet download

Five Points

Part Number: FDR856P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: USOP-8P

D/C: 07+

Description: MOSFET P-CH 30V 8A SSOT-8

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

FDR856P General Description

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed.

FDR856P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Draint Current - Continuous (Note 1)	-5.1	A
I_D	- Pulsed	-50	A
P_D	Maximum Power Dissipation (Note 1a)	1.8	W
	(Note 1b)	1
	(Note 1c)	0.9
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDR856P Features

·- 6.3 A, -30 V, RDS(ON) =0.025 W @ VGS = -10 V
RDS(ON) =0.040 W @ VGS = -4.5 V.
·SuperSOTTM-8 package: small footprint (40% less than SO-8);low profile (1mm thick);maximum power comperable to SO-8.
·High density cell design for extremely low RDS(ON).

FDR856P Connection Diagram

FDR858P Parameters

Technical/Catalog Information	FDR858P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	19 mOhm @ 8A, 10V
Input Capacitance (Ciss) @ Vds	2010pF @ 15V
Power - Max	900mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	30nC @ 5V
Package / Case	SSOT-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDR858P FDR858P FDR858PTR ND FDR858PTRND FDR858PTR

FDR858P General Description

The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.

FDR858P Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Draint Current - Continuous (Note 1)	-8	A
I_D	- Pulsed	-50	A
P_D	Maximum Power Dissipation (Note 1a)	1.8	W
	(Note 1b)	1
	(Note 1c)	0.9
T_J, T_STG	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDR858P Features

·-8 A, -30 V. RDS(ON) = 0.019 W @ VGS = -10 V,
RDS(ON) = 0.028 W @ VGS = -4.5 V.
·Low gate charge (21nC typical).
·High performance trench technology for extremely low RDS(ON).
·SuperSOTTM-8 package: small footprint (40%) less than SO-8); low profile (1mm thick); maximum power comperable to SO-8.

FDR858P Connection Diagram

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components