MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:00+
FQP10N60, FQP10N60C, FQP11N40 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220
D/C: 00+
Description: MOSFET N-CH 400V 11.4A TO-220
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PDF/DataSheet Download
Datasheet: FQP10N60C
File Size: 855857 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP10N60C
File Size: 855857 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP11N40
File Size: 725653 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQP10N60C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 9.5A |
| Rds On (Max) @ Id, Vgs | 730 mOhm @ 4.75A, 10V |
| Input Capacitance (Ciss) @ Vds | 2040pF @ 25V |
| Power - Max | 156W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 57nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP10N60C FQP10N60C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
| Symbol | Parameter | FQP10N60C | FQPF10N60C | Units |
| VDSS | Drain-Source Voltage | 600 | 600 | V |
| ID | Drain Current - Continuous (TC = 25°C) | 9.5 | 9.5 * | A |
| ID | Drain Current - Continuous (TC = 100°C) | 3.3 | 3.3* | A |
| IDM | Drain Current - Pulsed (Note 1) | 38 | 38* | A |
| VGSS | Gate-Source Voltage | ± 30 | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 700 | 700 | mJ |
| IAR | Single Pulsed Avalanche Energy (Note 2) | 9.5 | 9.5 | A |
| EAR | Repetitive Avalanche Energy | 15.6 | 15.6 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 4.5 | 4.5 | V/ns |
| PD | Power Dissipation (TC = 25°C) | 156 | 50 | W |
| PD | - Derate above 25°C | 1.25 | 0.4 | W/°C |
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | -55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | 300 | °C |
| Technical/Catalog Information | FQP11N40 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) @ 25° C | 11.4A |
| Rds On (Max) @ Id, Vgs | 480 mOhm @ 5.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 1400pF @ 25V |
| Power - Max | 147W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP11N40 FQP11N40 |
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