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FQP13N06, FQP13N06L, FQP13N10

Table of contents:
Info of FQP13N06
Info of FQP13N06L
Info of FQP13N10

FQP13N06, FQP13N06L, FQP13N10 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:09+

FQP13N06, FQP13N06L, FQP13N10 Datasheet download

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Part Number: FQP13N06

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 09+

Description: MOSFET N-CH 100V 12.8A TO-220

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FQP13N06 Parameters

Technical/Catalog Information	FQP13N06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	135 mOhm @ 6.5A, 10V
Input Capacitance (Ciss) @ Vds	310pF @ 25V
Power - Max	45W
Packaging	Tube
Gate Charge (Qg) @ Vgs	7.5nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP13N06 FQP13N06

FQP13N06 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.

FQP13N06 Maximum Ratings

Symbol	Parameter	FQP13N06	Units
V_DSS	Drain-Source Voltage	60	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C = 100)	13	A
I_D		9.2	A
I_DM	Drain Current - Pulsed (Note 1)	52	A
V_GSS	Gate-Source Voltage	± 25	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	85	mJ
I_AR	Avalanche Current (Note 1)	13	A
E_AR	Repetitive Avalanche Energy (Note 1)	4.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	45	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	0.3	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to +175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

FQP13N06 Features

* 13A, 60V, R_DS(on) = 0.135 @V_GS = 10 V
* Low gate charge ( typical 5.8 nC)
* Low Crss ( typical 15 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating

FQP13N06L Parameters

Technical/Catalog Information	FQP13N06L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	13.6A
Rds On (Max) @ Id, Vgs	110 mOhm @ 6.8A, 10V
Input Capacitance (Ciss) @ Vds	350pF @ 25V
Power - Max	45W
Packaging	Tube
Gate Charge (Qg) @ Vgs	6.4nC @ 5V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP13N06L FQP13N06L

FQP13N06L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

FQP13N06L Maximum Ratings

Symbol	Parameter	FQP13N06L	Units
V_DSS	Drain-Source Voltage	60	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	13.6	A
I_D		8.6	A
I_DM	Drain Current - Pulsed (Note 1)	54.4	A
V_GSS	Gate-Source Voltage	± 20	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	90	mJ
I_AR	Avalanche Current (Note 1)	13.6	A
E_AR	Repetitive Avalanche Energy (Note 1)	4.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	45	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.3	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 570H, I_AS = 13.6A, V_DD = 25V, R_G = 25 , Starting T_J = 25°C
3. I_SD 13.6A, di/dt 300A/s, V_DD BV_DSS, Starting T_J = 25°C

FQP13N06L Features

• 13.6A, 60V, R_DS(on) = 0.11 @V_GS = 10 V
• Low gate charge ( typical 4.8 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQP13N10 Parameters

Technical/Catalog Information	FQP13N10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	12.8A
Rds On (Max) @ Id, Vgs	180 mOhm @ 6.4A, 10V
Input Capacitance (Ciss) @ Vds	450pF @ 25V
Power - Max	65W
Packaging	Tube
Gate Charge (Qg) @ Vgs	16nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP13N10 FQP13N10

FQP13N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

FQP13N10 Maximum Ratings

Symbol	Parameter	FQP13N10	Units
V_DSS	Drain-Source Voltage	100	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C= 100)	12.8	A
I_D		9.05	A
I_DM	Drain Current - Pulsed (Note 1)	51.2	A
V_GSS	Gate-Source Voltage	± 25	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	95	mJ
I_AR	Avalanche Current (Note 1)	12.8	A
E_AR	Repetitive Avalanche Energy (Note 1)	6.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.0	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	65	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	0.43	W/
T_J , T_STG	Operating and Storage Temperature Range	-55 to +175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

FQP13N10 Features

* 12.8A, 100V, R_DS(on) = 0.18 @V_GS = 10 V
* Low gate charge ( typical 12 nC)
* Low Crss ( typical 20 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating

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