MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:08+
FQP11N50, FQP11N50CF, FQP11P06 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220
D/C: 08+
Description: MOSFET P-CH 60V 11.4A TO-220
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PDF/DataSheet Download
Datasheet: FQP11N50CF
File Size: 1302246 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP11N50CF
File Size: 1302246 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP11P06
File Size: 669585 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQP11N50CF |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 550 mOhm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 2055pF @ 25V |
| Power - Max | 195W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 55nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP11N50CF FQP11N50CF |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology
| Symbol | Parameter | FQP11N50CF | FQPF11N50CF | Units |
| VDSS | Drain-Source Voltage | 500 | V | |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
11 | 11* | A |
| 7 |
7* |
A | ||
| IDM | Drain Current - Pulsed (Note 1) | 44 | 44* | A |
| VGSS | Gate-Source Voltage | ± 30 | V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 670 | mJ | |
| IAR | Avalanche Current (Note 1) | 11 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | 19.5 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 4.5 | V/ns | |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
195 | 48 | W |
| 1.56 |
0.39 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +175 | °C | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C | |
| Technical/Catalog Information | FQP11P06 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 11.4A |
| Rds On (Max) @ Id, Vgs | 175 mOhm @ 5.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 550pF @ 25V |
| Power - Max | 53W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 17nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP11P06 FQP11P06 |
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
|
Symbol |
Parameter |
FQP11P06 |
Units |
| VDSS | Drain-Source Voltage |
-60 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-11.4 |
A |
|
-8.05 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
-45.6 |
A |
| VGSS | Gate-Source Voltage |
± 25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
160 |
mJ |
| IAR | Avalanche Current (Note 1) |
-11.4 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
5.3 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-7.0 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
53 |
W |
|
0.35 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55 to +175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
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