MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:06+
FQP3N50C, FQP3N60, FQP3N60C Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220
D/C: 06+
Description: MOSFET N-CH 600V TO-220
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: FQP3N50C
File Size: 1300056 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP3N60
File Size: 583245 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP10N20
File Size: 793262 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe,DMOS technology.
This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor cor-rection, electronic lamp ballasts based on half bridge topology.
| Symbol | Parameter | FQP3N50C | FQPF3N50C | Units | |
| VDSS | Drain-Source Voltage | 500 | V | ||
| ID | Drain Current | - Continuous (TC = 25) | 3 |
3 * | A |
| - Continuous (TC = 100) | 1.8 | 1.8 * | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 12 | 12 * | A | |
| VGSS | Gate-Source Voltage | ±30 | V | ||
| EAS | Single Pulsed Avalanche Energy (Note 2) | 200 | mJ | ||
| IAR | Avalanche Current (Note 1) | 3 | A | ||
| EAR | Repetitive Avalanche Energy (Note 1) | 6.2 | mJ | ||
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 4.5 | V/ns | ||
| PD | Power Dissipation (TC = 25) | 62 | 25 | W | |
| - Derate above 25 | 0.5 | 0.2 | W/ | ||
| TJ , TSTG | Operating and Storage Temperature Range | -55 to +150 | |||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | |||
| Technical/Catalog Information | FQP3N60 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 3A |
| Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 1.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 450pF @ 25V |
| Power - Max | 75W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 13nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP3N60 FQP3N60 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
|
Symbol |
Parameter |
FQP3N60 |
Units |
| VDSS | Drain-Source Voltage |
600 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
3.0 |
A |
|
1.9 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
12 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
200 |
mJ |
| IAR | Avalanche Current (Note 1) |
3.0 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
7.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
75 |
W |
|
0.6 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55 to +175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
| Technical/Catalog Information | FQP3N60C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 3A |
| Rds On (Max) @ Id, Vgs | 3.4 Ohm @ 1.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 565pF @ 25V |
| Power - Max | 75W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 14nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP3N60C FQP3N60C |
Price: 4-6 USD
MT58L64L18CT-10 TQFP100
Price: 5-6.5 USD
DL-7140-211M laser tube
Price: 4-5 USD
74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
Price: 6.5-8 USD
CYPRESS - Clock Synthesizer with Differential CPU Outputs
Price: 0.284-0.286 USD
PI5V330QEX Pericom Multiplexer Switch ICs
Price: 1-2 USD
IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
Price: 1-2 USD
a-Si TFT-LCD, NEC, 228.096Hmm, 560V
Price: 0.124-0.2 USD
PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
Price: 0.177-0.178 USD
RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
Price: 0.053-0.055 USD
STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
Price: 1.45-1.5 USD
STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
Price: 0.073-0.075 USD
SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components
