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FQP4N25, FQP4N50, FQP4N60

Table of contents:
Info of FQP4N25
Info of FQP4N50
Info of FQP4N60

FQP4N25, FQP4N50, FQP4N60 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:TO

FQP4N25, FQP4N50, FQP4N60 Datasheet download

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Part Number: FQP4N25

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: TO

Description: MOSFET N-CH 600V 4.4A TO-220

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FQP4N25 Parameters

Technical/Catalog Information	FQP4N25
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	3.6A
Rds On (Max) @ Id, Vgs	1.75 Ohm @ 1.8A, 10V
Input Capacitance (Ciss) @ Vds	200pF @ 25V
Power - Max	52W
Packaging	Tube
Gate Charge (Qg) @ Vgs	5.6nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP4N25 FQP4N25

FQP4N25 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supply.

FQP4N25 Maximum Ratings

Symbol	Parameter	FQP4N25	Units
V_DSS	Drain-Source Voltage	250	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	3.6	A
I_D		2.3	A
I_DM	Drain Current - Pulsed (Note 1)	14.4	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	52	mJ
I_AR	Avalanche Current (Note 1)	3.6	A
E_AR	Repetitive Avalanche Energy (Note 1)	5.2	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	52	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.42	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

FQP4N25 Features

• 3.6A, 250V, R_DS(on) = 1.75Ω @V_GS = 10 V
• Low gate charge ( typical 4.3nC)
• Low C_rss ( typical 4.8 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQP4N50 Parameters

Technical/Catalog Information	FQP4N50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	3.4A
Rds On (Max) @ Id, Vgs	2.7 Ohm @ 1.7A, 10V
Input Capacitance (Ciss) @ Vds	460pF @ 25V
Power - Max	70W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP4N50 FQP4N50

FQP4N60 Parameters

Technical/Catalog Information	FQP4N60
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	4.4A
Rds On (Max) @ Id, Vgs	2.2 Ohm @ 2.2A, 10V
Input Capacitance (Ciss) @ Vds	670pF @ 25V
Power - Max	106W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP4N60 FQP4N60

FQP4N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQP4N60 Maximum Ratings

Symbol	Parameter	FQP4N60	Units
V_DSS	Drain-Source Voltage	600	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	4.4	A
I_D		2.8	A
I_DM	Drain Current - Pulsed (Note 1)	17.6	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	260	mJ
I_AR	Avalanche Current (Note 1)	4.4	A
E_AR	Repetitive Avalanche Energy (Note 1)	10.6	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	106	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.85	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 25mH, I_AS = 4.4A, V_DD = 50V, R_G = 25 , Starting T_J= 25°C
3. I_SD 4.4A, di/dt 200A/s, V_DD BVDSS, Starting T_J = 25°C

FQP4N60 Features

• 4.4A, 600V, R_DS(on) = 2.2 @V_GS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 8.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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