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FQPF3N50C, FQPF3N60, FQPF3N80

Table of contents:
Info of FQPF3N50C
Info of FQPF3N60
Info of FQPF3N80

FQPF3N50C, FQPF3N60, FQPF3N80 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:06+

FQPF3N50C, FQPF3N60, FQPF3N80 Datasheet download

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Part Number: FQPF3N60

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 06+

Description: MOSFET N-CH 800V 1.8A TO-220F

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FQPF3N50C Parameters

Technical/Catalog Information	FQPF3N50C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	2.5 Ohm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds	365pF @ 25V
Power - Max	25W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF3N50C FQPF3N50C

FQPF3N50C General Description

These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe,DMOS technology.

This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor cor-rection, electronic lamp ballasts based on half bridge topology.

FQPF3N50C Maximum Ratings

Symbol	Parameter		FQP3N50C	FQPF3N50C	Units
V_DSS	Drain-Source Voltage		500		V
I_D	Drain Current	- Continuous (T_C = 25)	3	3 *	A
		- Continuous (T_C = 100)	1.8	1.8 *	A
I_DM	Drain Current - Pulsed (Note 1)		12	12 *	A
V_GSS	Gate-Source Voltage		±30		V
E_AS	Single Pulsed Avalanche Energy (Note 2)		200		mJ
I_AR	Avalanche Current (Note 1)		3		A
E_AR	Repetitive Avalanche Energy (Note 1)		6.2		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)		4.5		V/ns
P_D	Power Dissipation (T_C = 25)		62	25	W
	- Derate above 25		0.5	0.2	W/
T_J , T_STG	Operating and Storage Temperature Range		-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds		300

FQPF3N50C Features

* 3 A, 500 V, R_DS(on) = 2.5 @ V_GS= 10 V
* Low gate charge ( typical 10 nC )
* Low Crss ( typical 8.5 pF)
* Fast switching
* 100 % avalanche tested
* Improved dv/dt capability

FQPF3N60 Parameters

Technical/Catalog Information	FQPF3N60
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	3.6 Ohm @ 1A, 10V
Input Capacitance (Ciss) @ Vds	450pF @ 25V
Power - Max	34W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF3N60 FQPF3N60

FQPF3N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQPF3N60 Maximum Ratings

Symbol	Parameter	FQPF3N60	Units
V_DSS	Drain-Source Voltage	600	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	2.0	A
I_D		1.26	A
I_DM	Drain Current - Pulsed (Note 1)	8.0	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	200	mJ
I_AR	Avalanche Current (Note 1)	2.0	A
E_AR	Repetitive Avalanche Energy (Note 1)	3.4	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	34	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.27	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 92mH, I_AS = 2.0A, V_DD = 50V, R_G = 25 , Starting T_J = 25°C
3. I_SD 3.0A, di/dt 200A/s, V_DD BV_DSS, Starting T_J= 25°C

FQPF3N60 Features

• 2.0A, 600V, R_DS(on) = 3.6 @V_GS = 10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF3N80 Parameters

Technical/Catalog Information	FQPF3N80
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	1.8A
Rds On (Max) @ Id, Vgs	5 Ohm @ 900mA, 10V
Input Capacitance (Ciss) @ Vds	690pF @ 25V
Power - Max	39W
Packaging	Tube
Gate Charge (Qg) @ Vgs	19nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF3N80 FQPF3N80

FQPF3N80 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQPF3N80 Maximum Ratings

Symbol	Parameter	FQPF3N80	Units
V_DSS	Drain-Source Voltage	800	V
I_D	Drain Current - Continuous (T_C= 25) - Continuous (T_C= 100)	1.8	A
I_D		1.14	A
I_DM	Drain Current - Pulsed (Note 1)	7.2	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	320	mJ
I_AR	Avalanche Curren (Note 1)	1.8	A
E_AR	Repetitive Avalanche Energy (Note 1)	3.9	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	39	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	0.31	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

FQPF3N80 Features

* 1.8A, 800V, R_DS(on) = 5.0 @V_GS = 10 V
* Low gate charge ( typical 15 nC)
* Low Crss ( typical 7.0 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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