MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:06+
FQPF9N50CF, FQPF9N50T, FQPF9N90C Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220
D/C: 06+
Description: MOSFET N-CH 900V 9A TO-220F
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PDF/DataSheet Download
Datasheet: FQPF9N50CF
File Size: 793118 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP10N20
File Size: 793262 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQPF9N90C
File Size: 862253 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQPF9N50CF |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 9A |
| Rds On (Max) @ Id, Vgs | 850 mOhm @ 4.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1030pF @ 25V |
| Power - Max | 44W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF9N50CF FQPF9N50CF |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
|
Symbol |
Characteristic |
FQPF9N50CF |
Units |
|
VDSS |
Drain-to-Source Voltage |
500 |
V |
|
ID |
Continuous Drain Current (TC=25 ) |
9* |
A |
| Continuous Drain Current (TC=100 ) |
5.4* |
A | |
|
IDM |
Drain Current - Pulsed(Note 1) |
36* |
A |
|
VGSS |
Gate-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
360 |
mJ |
|
IAR |
Avalanche Current(Note 1) |
9 |
A |
|
EAR |
Repetitive Avalanche Energy(Note 1) |
4.4 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt(Note 3) |
4.5 |
V/ns |
|
PD |
Power Dissipation (TC=25 ) - Derate above 25°C |
44 0.35 |
W W/ |
|
TJ , TSTG |
Operating and Storage Temperature Range |
- 55 to +150 |
|
|
TL |
Maximum Lead Temp. for Soldering Purposes,1/8` from case for 5 seconds |
300 |
| Technical/Catalog Information | FQPF9N50T |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 5.3A |
| Rds On (Max) @ Id, Vgs | 730 mOhm @ 2.65A, 10V |
| Input Capacitance (Ciss) @ Vds | 1450pF @ 25V |
| Power - Max | 50W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 36nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF9N50T FQPF9N50T |
| Technical/Catalog Information | FQPF9N90C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | 8A |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 4A, 10V |
| Input Capacitance (Ciss) @ Vds | 2730pF @ 25V |
| Power - Max | 68W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 58nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF9N90C FQPF9N90C |
These N-Channel enhancement mode power field effecttransistors are produced using Fairchild?s proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies.
| Product | Product status | Eco Status | Pricing* | Package type | Leads | Packing method | Package Drawing | Package Marking Convention** |
|---|---|---|---|---|---|---|---|---|
| FQPF9N90C | Not recommended for new designs | RoHS Compliant | N/A | TO-220F | 3 | RAIL | TBD | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FQPF Line 3: 9N90C |
| FQPF9N90CT | Full Production | RoHS Compliant | $1.90 | TO-220F | 3 | RAIL | TBD | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FQPF Line 3: 9N90C |
| * Fairchild 1,000 piece Budgetary Pricing |
| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
Package marking information for product FQPF9N90C is available. Click here for more information . |
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