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IXKC13N80C, IXKC20N60C, IXKF40N60SCD

IXKC13N80C, IXKC20N60C, IXKF40N60SCD Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  Package Cooled:1000  D/C:9828+

IXKC13N80C, IXKC20N60C, IXKF40N60SCD Picture

IXKC13N80C, IXKC20N60C, IXKF40N60SCD Datasheet download

Five Points

Part Number: IXKC13N80C

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: 1000

D/C: 9828+

Description: MOSFET SGL 600V 15A ISOPLUS220

 

 
 
 
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About IXKC13N80C

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Datasheet: IXKC13N80C

File Size: 1173192 KB

Manufacturer: IXYS [IXYS Corporation]

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About IXKC13N80C

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Datasheet: IXKC13N80C

File Size: 1173192 KB

Manufacturer: IXYS [IXYS Corporation]

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Datasheet: IXKC13N80C

File Size: 1173192 KB

Manufacturer: IXYS [IXYS Corporation]

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IXKC13N80C Parameters

Technical/Catalog InformationIXKC13N80C
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C13A
Rds On (Max) @ Id, Vgs290 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 2300pF @ 25V
Power - Max-
PackagingTube
Gate Charge (Qg) @ Vgs90nC @ 10V
Package / CaseISOPLUS220?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXKC13N80C
IXKC13N80C

IXKC13N80C Maximum Ratings

Symbol Test Conditions Maximum Ratings
VDSS TJ = 25°C to 150°C 800
V
V
VGS Continuous ±20
V
ID25
ID90
TC = 25°C; Note 1
TC = 90°C; Note 1
13
9

A
A


ID(RMS) Package lead current limit 45 A
EAS
EAR
ID = 4A, TC = 25°C
ID = 10A
670
0.5
mJ
mJ
dv/dt VDS < VDSS, IF 17 A, TVJ = 150°C
dS/dt = 100 A/µs
6 V/ns
PD TC = 25°C 125 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300
°C
VISOL RMS leads-to-tab, 50/60 Hz, t = 1 minute 2500 V~
FC Mounting force 11 ... 65 / 2.4 ...11 Nm/lb.in.
Weight   2 g

IXKC13N80C Features

·Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
·3RD generation CoolMOS power MOSFET
   - High blocking capability
   - Low on resistance
   - Avalanche rated for unclamped inductive switching (UIS)
·Low thermal resistance due to reduced chip thickness
·Low drain to tab capacitance(<30pF)

IXKC13N80C Typical Application

· Switched Mode Power Supplies (SMPS)
· Uninterruptible Power Supplies (UPS)
· Power Factor Correction (PFC)
· Welding
· Inductive Heating

IXKC20N60C Parameters

Technical/Catalog InformationIXKC20N60C
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs190 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 25V
Power - Max-
PackagingTube
Gate Charge (Qg) @ Vgs114nC @ 10V
Package / CaseISOPLUS220?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXKC20N60C
IXKC20N60C

IXKC20N60C General Description



IXKC20N60C Maximum Ratings

Symbol
Test Conditions
Maximum
Ratings
VDSS
TJ = 25to 150
600
V
VGS
Continuous
±20
V
IC25
IC90
TC = 25; Note 1
TC = 90; Note 1
14
10
A
A
ID(RMS)
Package lead current limit
45
A
EAS
EAR
Io = 10A, TC = 25
Io = 20A
690
1
mJ
mJ
PD
TC = 25
125
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +125


TL
1.6 mm (0.063 in.) from case for 10 s
300
VISOL
RMS leads-to-tab, 50/60 Hz, t = 1 minute
2500
V~
FC
Mounting force 11
11...65 / 2.4...11
N/lb
Weight
 
3
g



IXKC20N60C Features

·  Silicon chip on Direct-Copper-Bond substrate
     - High power dissipation
     - Isolated mounting surface
     - 2500V electrical isolation
·  3RD generation CoolMOS power MOSFET
     - High blocking capability
     - Low on resistance
     - Avalanche rated for unclamped inductive switching (UIS)
·  Low thermal resistance due to reduced chip thickness
·  Low drain to tab capacitance(<30pF)


IXKC20N60C Typical Application

·  Switched Mode Power Supplies (SMPS)
·  Uninterruptible Power Supplies (UPS)
·  Power Factor Correction (PFC)
·  Welding
·  Inductive Heating

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