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IXTH15N80, IXTH16P20, IXTH20N50

Table of contents:
Info of IXTH15N80
Info of IXTH16P20
Info of IXTH20N50

IXTH15N80, IXTH16P20, IXTH20N50 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:IXYS D/C:02+

IXTH15N80, IXTH16P20, IXTH20N50 Datasheet download

Five Points

Part Number: IXTH15N80

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: IXYS

D/C: 02+

Description: MOSFET P-CH 200V 16A TO-247

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IXTH16P20 Parameters

Technical/Catalog Information	IXTH16P20
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	160 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	2800pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	95nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTH16P20 IXTH16P20

IXTH16P20 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_CES V_CGR	T_J= 25°C to 150°C T_J = 25°C to 150°C; R_GE = 1 M	-200 -200	V V
V_GES V_GEM	Continuous Transient	±20 ±30	V
I_D25_IDM IAR	T_C= 25°C T_C = 25°C, pulse width limited by TJM	-16 -64 -16	A A A
EAR	TC = 25°C	30	mJ
P_D	T_C= 25°C	180	W
T_J T_JM T_stg	1.6 mm (0.063 in) from case for 10 s	-55 ... +150 150 -55 ... +150	°C °C °C
TL	Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s	300	°C
Md	Mounting torque	1.13/10	Nm/lb.in.
Weight		6	g

IXTH16P20 Features

• International standard package JEDEC TO-247 AD
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance (<5 nH)
- easy to drive and to protect

IXTH16P20 Typical Application

• High side switching
• Push-pull amplifiers
• DC choppers
• Automatic test equipment

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