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IXTK102N30P, IXTK120N20P, IXTK120N25

Table of contents:
Info of IXTK102N30P
Info of IXTK120N20P
Info of IXTK120N25

IXTK102N30P, IXTK120N20P, IXTK120N25 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:IXYS D/C:TO

IXTK102N30P, IXTK120N20P, IXTK120N25 Picture

IXTK102N30P, IXTK120N20P, IXTK120N25 Datasheet download

Five Points

Part Number: IXTK102N30P

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: IXYS

D/C: TO

Description: MOSFET N-CH 250V 120A TO-264

Price Break

Unit Price

6.98820

Extended Price

349.41

(All prices are in USD) Prices for reference only

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IXTK102N30P Parameters

Technical/Catalog Information	IXTK102N30P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	102A
Rds On (Max) @ Id, Vgs	33 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	7500pF @ 25V
Power - Max	700W
Packaging	Tube
Gate Charge (Qg) @ Vgs	224nC @ 10V
Package / Case	TO-264
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTK102N30P IXTK102N30P

IXTK120N20P Parameters

Technical/Catalog Information	IXTK120N20P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	120A
Rds On (Max) @ Id, Vgs	22 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	6000pF @ 25V
Power - Max	714W
Packaging	Tube
Gate Charge (Qg) @ Vgs	152nC @ 10V
Package / Case	TO-264
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTK120N20P IXTK120N20P

IXTK120N25 Parameters

Technical/Catalog Information	IXTK120N25
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	120A
Rds On (Max) @ Id, Vgs	20 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	7700pF @ 25V
Power - Max	730W
Packaging	Tube
Gate Charge (Qg) @ Vgs	360nC @ 10V
Package / Case	TO-264AA
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTK120N25 IXTK120N25

IXTK120N25 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
VCES VCGR	TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M?	600 600	V V
VGES VGEM	Continuous Transient	±20 ±30	V V
IC25 IC90 ICM	TC = 25°C TC = 90°C TC = 25°C, 1 ms	50 30 100	A A A
SSOA (RBSOA)	VGE = 15 V, T_VJ = 125°C, RG = 33 ? Clamped inductive load, L = 100 H	ICM = 60 @ 0.8 V_CES	A
tSC (SCSOA)	VGE = 15 V, VCE =360 V, TJ = 125°C RG = 33 ?, non repetitive	10	s
PC	TC = 25°C	200	W
TJ TJM Tstg		-55 ... +150 150 -55 ... +150	°C °C °C
Md	Mounting torque	1.13/10	Nm/lb.in.
Weight		6	g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s		300	°C

IXTK120N25 Features

• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• International standard package
• Fast switching times

IXTK120N25 Typical Application

• Motor controls
• DC choppers
• Switched-mode power supplies

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