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IXTN120N50, IXTN15N100, IXTN21N100

IXTN120N50, IXTN15N100, IXTN21N100 Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  D/C:5

IXTN21N100 Picture

IXTN120N50, IXTN15N100, IXTN21N100 Datasheet download

Five Points

Part Number: IXTN21N100

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled:

D/C: 5

Description: MOSFET N-CH 1KV 21A SOT-227B

 

 
 
 
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IXTN120N50 Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-27
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA 3N120

PDF/DataSheet Download

Datasheet: IXTA 3N120

File Size: 576233 KB

Manufacturer:

Download : Click here to Download

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IXTN15N100 Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-27
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA 3N120

PDF/DataSheet Download

Datasheet: IXTA 3N120

File Size: 576233 KB

Manufacturer:

Download : Click here to Download

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IXTN21N100 Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-27
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTN21N100

PDF/DataSheet Download

Datasheet: IXTN21N100

File Size: 140459 KB

Manufacturer: IXYS [IXYS Corporation]

Download : Click here to Download

Related PDF Download

Related Part Number

IXTN21N100 Parameters

Technical/Catalog InformationIXTN21N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C21A
Rds On (Max) @ Id, Vgs550 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 8400pF @ 25V
Power - Max520W
PackagingTube
Gate Charge (Qg) @ Vgs250nC @ 10V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTN21N100
IXTN21N100

IXTN21N100 Maximum Ratings

Symbol Test Conditions Maximum Ratings
IXTK IXTN
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
1000
1000
1000
1000
V
V
VGES
VGEM
Continuous
Transient
±20
±30
±20
±30
V
V
ID25
IDM
21
84
21
84
21
84
A
A
PD TC = 25°C 500 500 w
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.063 in) from case for 10 s 300 - °C
VISOL 50/60 Hz, RMS t = 1 min
IISOL 1 mA t = 1 s
-
-
2500
3000
V~
V~
Md Mounting torque
Terminal connection torque
0.9/6
-
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in..
Weight   10 30 g

IXTN21N100 Features

·International standard packages JEDEC TO-264, epoxy meet UL 94 V-0
·flammability classification
·miniBLOC, (ISOTOP-compatible) with
·Aluminium nitride isolation
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Low package inductance

IXTN21N100 Typical Application

·DC-DC converters
·Synchronous rectification
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·Temperature and lighting controls

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