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IXTP10N60PM, IXTP110N055P, IXTP11P15(A)

IXTP10N60PM, IXTP110N055P, IXTP11P15(A) Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  Package Cooled:TO-220 Overmolded  D/C:TO-220 Overmolded

IXTP110N055P Picture

IXTP10N60PM, IXTP110N055P, IXTP11P15(A) Datasheet download

Five Points

Part Number: IXTP110N055P

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-220 Overmolded

D/C: TO-220 Overmolded

Description: MOSFET N-CH 55V 110A TO-220

 

 
 
 
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IXTP10N60PM Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-28
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA 3N120

PDF/DataSheet Download

Datasheet: IXTA 3N120

File Size: 576233 KB

Manufacturer:

Download : Click here to Download

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IXTP110N055P Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-28
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTP110N055P

PDF/DataSheet Download

Datasheet: IXTP110N055P

File Size: 123305 KB

Manufacturer: IXYS [IXYS Corporation]

Download : Click here to Download

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IXTP11P15(A) Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-28
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA 3N120

PDF/DataSheet Download

Datasheet: IXTA 3N120

File Size: 576233 KB

Manufacturer:

Download : Click here to Download

Related PDF Download

Related Part Number

IXTP10N60PM Parameters

Technical/Catalog InformationIXTP10N60PM
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C5A
Rds On (Max) @ Id, Vgs740 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds 1610pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs32nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP10N60PM
IXTP10N60PM

IXTP110N055P Parameters

Technical/Catalog InformationIXTP110N055P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C110A
Rds On (Max) @ Id, Vgs13.5 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2210pF @ 25V
Power - Max390W
PackagingTube
Gate Charge (Qg) @ Vgs76nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP110N055P
IXTP110N055P

IXTP110N055P Maximum Ratings

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25 to 150 600
TJ= 25 to 150 ; RGE = 1 M
55
55
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25
External lead current limit
TC = 25, pulse width limited by TJM
110
75
250
A
A
IAR
EAR
EAS
TC = 25
TC = 25
TC = 25
110
30
1.0
A
mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4 Ω
10 V/ns
PD TC = 25 330 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md Mounting torque(TO-3P / TO-220) 1.13/10 Nm/lb.in.
Weight TO-3P
TO-220
TO-263
5.5
4
3
g
g
g

IXTP110N055P Features

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
   - easy to drive and to protect

IXTP110N055P Typical Application

·Easy to mount
·Space savings
·High power density

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