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IXTP6N50P, IXTP75N10P, IXTP7N45

IXTP6N50P, IXTP75N10P, IXTP7N45 Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  Package Cooled:TO-220  D/C:TO-220

IXTP6N50P Picture

IXTP6N50P, IXTP75N10P, IXTP7N45 Datasheet download

Five Points

Part Number: IXTP6N50P

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-220

D/C: TO-220

Description: MOSFET N-CH 100V 75A TO-220

 

 
 
 
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IXTP6N50P Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-28
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA 3N120

PDF/DataSheet Download

Datasheet: IXTA 3N120

File Size: 576233 KB

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IXTP75N10P Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-28
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTP75N10P

PDF/DataSheet Download

Datasheet: IXTP75N10P

File Size: 595193 KB

Manufacturer: IXYS [IXYS Corporation]

Download : Click here to Download

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IXTP7N45 Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-28
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA 3N120

PDF/DataSheet Download

Datasheet: IXTA 3N120

File Size: 576233 KB

Manufacturer:

Download : Click here to Download

Related PDF Download

Related Part Number

IXTP6N50P Parameters

Technical/Catalog InformationIXTP6N50P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs1.1 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 740pF @ 25V
Power - Max100W
PackagingTube
Gate Charge (Qg) @ Vgs14.6nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP6N50P
IXTP6N50P

IXTP75N10P Parameters

Technical/Catalog InformationIXTP75N10P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs25 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2250pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs74nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTP75N10P
IXTP75N10P

IXTP75N10P Maximum Ratings

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25 to 150 600
TJ= 25 to 150 ; RGE = 1 M
100
100
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25
TC = 25, pulse width limited by TJM
75
200
A
A
A
A
IAR
EAR
EAS
TC = 25°C
TC  = 25°C
TC  = 25°C
50
30
1.0
A
mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 10 Ω
10 V/ns
PD TC = 25 300 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
300
260
°C
°C
Md Mounting torque, TO-247 1.13/10 Nm/lb.in.
Weight TO-3P
TO-220
TO-263
5.5
4
3
g
g
g

IXTP75N10P Features

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
   - easy to drive and to protect

IXTP75N10P Typical Application

·Easy to mount
·Space savings
·High power density

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