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IXTQ160N10T, IXTQ180N055T, IXTQ23N60Q

Table of contents:
Info of IXTQ160N10T
Info of IXTQ180N055T
Info of IXTQ23N60Q

IXTQ160N10T, IXTQ180N055T, IXTQ23N60Q Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:D/S D/C:TO-

IXTQ160N10T, IXTQ180N055T, IXTQ23N60Q Datasheet download

Five Points

Part Number: IXTQ160N10T

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: D/S

D/C: TO-

Description: MOSFET N-CH 600V 23A TO-3P

Price Break

1
10
50
100
500
1000

Unit Price

3.43000
2.74000
2.27000
1.96000
1.84950
1.71001

Extended Price

3.43
27.40
113.50
196.00
924.75
1710.01

(All prices are in USD) Prices for reference only

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

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IXTQ160N10T Parameters

Technical/Catalog Information	IXTQ160N10T
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	160A
Rds On (Max) @ Id, Vgs	7 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	6600pF @ 25V
Power - Max	430W
Packaging	Tube
Gate Charge (Qg) @ Vgs	132nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTQ160N10T IXTQ160N10T

IXTQ180N055T Parameters

Technical/Catalog Information	IXTQ180N055T
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	180A
Rds On (Max) @ Id, Vgs	4 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	5800pF @ 25V
Power - Max	360W
Packaging	Tube
Gate Charge (Qg) @ Vgs	160nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTQ180N055T IXTQ180N055T

IXTQ180N055T Maximum Ratings

Parameter	Symbol	Rating	Unit
Voltage on Any Pin Relative to V_SS	V_IN, V_OUT	0.5 to 4.6	V
Voltage VCC Supply Relative to V_SS	V_CC	0.5 to 4.6	V
Short Circuit Output Current	I_OS	50	mA
Power Dissipation	P_D	8	W
Operating Temperature	T_op	0 to 70	°C
Storage Temperature	T_stg	40 to 125	°C

Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

IXTQ180N055T Features

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect

IXTQ180N055T Typical Application

·Easy to mount
·Space savings
·High power density

IXTQ23N60Q Parameters

Technical/Catalog Information	IXTQ23N60Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	23A
Rds On (Max) @ Id, Vgs	320 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	3300pF @ 25V
Power - Max	400W
Packaging	Tube
Gate Charge (Qg) @ Vgs	90nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTQ23N60Q IXTQ23N60Q

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