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IXTT75N10, IXTT82N25P, IXTT88N30P

Table of contents:
Info of IXTT75N10
Info of IXTT82N25P
Info of IXTT88N30P

IXTT75N10, IXTT82N25P, IXTT88N30P Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO- D/C:TO-

IXTT75N10, IXTT82N25P, IXTT88N30P Picture

IXTT75N10, IXTT82N25P, IXTT88N30P Datasheet download

Five Points

Part Number: IXTT75N10

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-

D/C: TO-

Description: MOSFET N-CH 300V 88A TO-268

Price Break

Unit Price

24.19000

Extended Price

725.70

(All prices are in USD) Prices for reference only

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IXTT75N10 Parameters

Technical/Catalog Information	IXTT75N10
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	20 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4500pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	260nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTT75N10 IXTT75N10

IXTT82N25P Parameters

Technical/Catalog Information	IXTT82N25P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	82A
Rds On (Max) @ Id, Vgs	35 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4800pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	142nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTT82N25P IXTT82N25P

IXTT82N25P Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_CESV_CGR	T_J = 25 to 150 600 T_J= 25 to 150 ; R_GE = 1 M	250 250	V
V_GES V_GEM	Continuous Transient	±20 ±30	V V
I_D25 I_D(RMS) I_DM	T_C = 25 External lead current limit T_C = 25, pulse width limited by TJM	82 75 250	A A
I_AR E_ARE_AS	T_C = 25 T_C = 25 T_C = 25	60 40 1.0	A mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS, T_J 150°C, R_G = 4 Ω	10	V/ns
P_D	T_C = 25	500	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.062 in.) from case for 10 s	300	°C
M_d	Mounting torque	1.13/10	Nm/lb.in.
Weight	TO-3P TO-264 TO-268	5.5 10 5.0	g g g

IXTT82N25P Features

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect

IXTT82N25P Typical Application

·Easy to mount
·Space savings
·High power density

IXTT88N30P Parameters

Technical/Catalog Information	IXTT88N30P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	88A
Rds On (Max) @ Id, Vgs	40 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	6300pF @ 25V
Power - Max	600W
Packaging	Tube
Gate Charge (Qg) @ Vgs	180nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTT88N30P IXTT88N30P

IXTT88N30P Features

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect

IXTT88N30P Typical Application

·Easy to mount
·Space savings
·High power density

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