MTP2955V, MTP29N15E, MTP2N20 Selling Leads, Datasheet
MFG:MOT/ON Package Cooled:09+ D/C:TO-220
MTP2955V, MTP29N15E, MTP2N20 Datasheet download
Part Number: MTP2955V
MFG: MOT/ON
Package Cooled: 09+
D/C: TO-220
MTP2955V, MTP29N15E, MTP2N20
- Table of contents:
Info of MTP2955V
Info of MTP29N15E
Info of MTP2N20
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About MTP2955V
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Datasheet: MTP2955V
File Size: 402914 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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About MTP29N15E
PDF/DataSheet Download
Datasheet: MTP29N15E
File Size: 76946 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTP2N20
PDF/DataSheet Download
Datasheet: MTP2N20
File Size: 181020 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTP2955V General Description
This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies).
MTP2955V Maximum Ratings
|
Symbol |
Rating |
Value |
Unit |
|
VDSS |
DrainSource Voltage |
-60 |
V |
|
VDGR |
GateSource Voltage |
± 20 |
V |
|
ID |
Drain Current -Continuous -Pulsed |
-12 -42 |
A |
|
PD |
Total Power Dissipation @ TC = 25°C Derate above 25°C |
60 0.40 |
W W/°C °C |
|
TJ, Tstg |
Operating and Storage Temperature Range |
60 to 175 |
°C |
MTP2955V Features
`-12 A, -60 V. RDS(ON) = 0.230 @ VGS = -10 V
` Critical DC electrical parameters specified at elevated temperature.
` Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
` 175°C maximum junction temperature rating.
` Critical DC electrical parameters specified at elevated temperature.
` Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
` 175°C maximum junction temperature rating.
MTP29N15E General Description
This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTP29N15E Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
150 |
Vdc |
| DraintoGate Voltage (RGS =1.0 M) |
VDGR |
150 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 400 |
Vdc VPK |
| Drain Current - Continuous - Continuous@ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
29 19 102 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
125 1.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS =10Vdc,PeakIL =29 Apk L =1.0mH, RG = 25 |
EAS |
421 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.0 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
MTP29N15E Features
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
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